High-Power Inverted Doherty Power Amplifier for Broadband Application

نویسندگان

  • Jehyeon Gu
  • Mincheol Seo
  • Hwiseob Lee
  • Jinhee Kwon
  • Junghyun Ham
  • Hyungchul Kim
  • Youngoo Yang
چکیده

Abstract This paper presents a high-power inverted Doherty power amplifier for broader operational bandwidth. After analyzing two operation modes according to the load modulation of the Doherty power amplifier, the inverted Doherty structure was selected. In the design, the load impedances for optimum broadband characteristics at both the back-off and peak power levels. The Doherty power amplifier was designed to have simultaneously optimized back-off efficiency and load impedances at peak power level. The designed inverted Doherty power amplifier based on LDMOSFET’s shows high efficiency of more than 40 % at the point backed-off by 6 dB from the 1 dB compression point of 50 dBm and at the band from 2.04 to 2.24 GHz.

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تاریخ انتشار 2014